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 ISL9R860P2, ISL9R860S3ST — STEALTH? Diode diF/dt, CURRENT RA TE OF CHA NGE ( A/μs) Figure 7 . Reverse Re covery Softness Factor vs diF/dt diF/dt, CURR ENT RA TE OF CHA NGE (A/μs) Figure 8. Reverse Recovery C harge vs d iF/dt Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. DC Current Derating Curve Figure 11. Normalized Maximum Transient Thermal Impedance Typical Performance Curves (Continued) 100 1 2 3 4 5 6 200 300 400 500 600 800 900700 1000 VR = 390V, T J = 125°C IF = 16A IF = 8A IF = 4A S, REVERSE RECOVERY SOFTNESS FACTOR 50 100 150 200 250 300 350 VR = 390V, T J = 125°C IF = 16A IF = 8A IF = 4A Q RR , REVERSE RECOVERY CHARGE (nC) 100 200 300 400 500 600 800 900700 1000 VR, REVERSE VOLTAGE (V) C J , JUNCTION CAPACITANCE (pF) 0 200 400 600 800 1000 1200 0.1 1001 10 4 0 140 175145 160 170 150 155 165 6 8 10 TC, CASE TEMPERATURE (oC) I F(AV) , AVERAGE FORWARD CURRENT (A) 2 t, RECTANGULAR PULSE DURATION (s) 10-5 10-2 10-1 Z θ JA , NORMALIZED THERMAL IMPEDANCE 0.01 10-4 10-3 SINGLE PULSE 100 0.1 101 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.01 0.02 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = P DM x Z θJA x R θJA + T A PDM t1 t2 1.0 ?2001 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. C1 www.fairchildsemi.com 4 |